High performance 2Mbit asynchronous Async Fast SRAM static random access memory

In the field of semiconductor storage,static random access memory(SRAM),as one of the key storage devices,is widely used in various scenarios that require high-speed data access.SRAM is mainly divided into two categories:dynamic memory(DRAM)and static memory(SRAM),in which SRAM stores data in a bistable flip-flop structure without refreshing the circuit.As long as the power supply is maintained,the data can be stored for a long time without being lost.This feature makes SRAM play an irreplaceable role in secondary cache,high-speed register and industrial control system.
 

In SRAM,asynchronous SRAM,as a classic type,works independently of the system master clock,and has the ability of independent operation,especially suitable for old-fashioned systems with flexible timing requirements and some modern industrial applications.On this basis,the fast asynchronous SRAM further improves the access performance,which usually refers to products with access time less than 35ns.It has higher work efficiency and is suitable for cache scenes with strict requirements on response speed.
 

High performance 2mbit Async Fast SRAM——Highlights of EMI 502wf1lm-10c products

The Async Fast SRAM products of Weiling Chuangxin series introduced by Yingshang Microelectronics adopt the classic bistable circuit structure design,and can realize high-speed and stable data storage function without external refresh circuit.Async SRAM series memory not only retains the compatibility and ease of use of asynchronous SRAM,but also further optimizes the speed and power consumption,which is especially suitable for secondary cache of old computers,data temporary storage of embedded systems,and buffer storage modules in industrial equipment.
 

As one of the representative models of this series,asynchronous SRAM EMI 502 W F1lm-10c has a storage capacity of 2Mbit,an internal structure of 128K×16 bits,and supports low-voltage operation of 1.8V V.It can effectively control power consumption and achieve a fast access time of up to 15ns.The industrial working temperature range of asynchronous Async Fast SRAM(0℃to 70℃)and 48-pin FBGA package make it very suitable for embedded and industrial application scenarios with limited space and complex environment.
 

Overview of parameters of Async Fast SRAM EMI502WF16LM-10C

①storage capacity:2Mbit

②Organizational structure:128K×16bit

③Working voltage:1.8V

④Access time:15ns

⑤Working temperature:0℃~+70℃

⑥Package form:48-FBGA
 

Application Scenario Recommendation of Async Fast SRAM Static Random Access Memory

With its advantages of high speed response,simple structure and good system compatibility,EMI502WF16LM-10C can be widely used in the following scenarios:

①L2 Cache of traditional PC and embedded devices.

②Async Fast SRAM static random access memory can be used for data packet buffering in network communication equipment.

③Used for real-time data acquisition and cache in industrial control system.

④High-speed storage module in medical equipment and test instruments.
 

Async Fast SRAM static random access memory,as a classic storage solution,still plays an important role in specific industrial and embedded systems.EMI502WF16LM-10C not only inherits the stability and reliability of asynchronous SRAM,but also achieves a good balance between speed and integration,which provides an efficient cache choice for system engineers with both performance and cost.For further information about the product data sheet,sample application or procurement,please contact Yingshang Microelectronics Technical Support Team for professional services.

Keywords: Async Fast SRAM,static random access memory