High-speed communication chip technology based on gallium nitride Micro-LED

In order to meet the urgent demand of artificial intelligence and huge computing power for"high speed,low power consumption and high reliability"communication,the gan-based Micro-LED core modulation light source is focused,and the technology chain of device design and communication system is developed by the joint research team of Nanda,Fudan,Xiamen University,Jida,Nanyou and the third generation semiconductor technology innovation center(Suzhou).The team successfully solved the core problem that the efficiency and bandwidth of Micro-LED are difficult to improve synergistically:through innovative development of light atom sidewall passivation technology,the photoelectric efficiency and reliability of the device are significantly improved;The quantum well structure is optimized systematically,which achieves high bandwidth at GHz level while maintaining high optical efficiency.
 

Based on this,the Micro-LED chip has excellent performance,with a bandwidth of nearly 2.2GHz,and has created a record of 9.06Gbps transmission rate in free space optical communication,which significantly reduces the power consumption of short-distance optical interconnection to 7.34pJ/bit.This achievement systematically breaks through the technical bottleneck of Micro-LED in high bandwidth and low power consumption,and lays a solid foundation for the next generation of high-speed optical interconnection technology.